Virtual Reactor for Modeling of Epitaxy and Bulk Crystal Growth from the Vapor

Virtual Reactor (VR) is a family of two-dimensional software tools designed for the simulation of epitaxy and long-term growth of bulk crystals from the vapor phase. It allows the user to analyze the growth-related phenomena, follow the crystal shape evolution during the whole growth, study the source evolution and defect dynamics. Virtual Reactor is designed to serve for simplifying and accelerating optimization of both growth system design and process conditions and is intended to be exploited by the growth engineers for R&D and production.

The software come in several editions depending on the materials system it simulates and the type of the process. It also has two add-on modules for analysis of bulk crystal growth – Threading Dislocations and Unsteady Module.

Virtual Reactor for Epitaxy

Epitaxial editions of VR are focused on helping with achieving higher growth rate and compositional uniformity, increasing efficiency. Some editions can also simulate level and uniformity of unintentional and extrinsic doping. Of cause, to obtain the results listed above it is necessary to conduct accurate thermal and flow modeling, have models of parasitic deposition on the reactor surfaces, gas phase reactions and secondary phase formation (where applicable):

III-Nitrides

III-Vs

CVD SiC

CVD Si and SiGe

HTCVD of SiC

HVPE of III-Vs and Oxides

MOCVD of Oxydes

Mesh and temperature distribution in the growth system in modeling of PVT SiC

Virtual Reactor for Bulk Crystal Growth

Detailed heat and mass transfer, crystal shape evolution, source degradation (where applicable), dislocation dynamics, residual stress and more. Have a look at the illustrated examples:

PVT SiC

PVT AlN

HVPE

HTCVD of SiC

Add-on: Threading Dislocations Module

Add-on: Unsteady Module (main feature – stress and BPD evolution during cooling, Alexander-Haasen model)