ECSCRM 2018
On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.
CGSim 18.2 Has Been Released
STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution.
CIMTEC 2018
June 4 to 14, 2018, STR will participate in CIMTEC 2018 – 14th International Conference on Modern Materials and Technologies – in Perugia, Italy
CS MANTECH 2018
STR will participate in exhibition at CS MANTECH conference that will be held in Austin, Texas on May 7th – 10th, 2018. See www.csmantech.org for details.
SiC Growth by TSSG
Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.
Efficiency of True-Green LEDs
Full text of a new publication “Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects” by Ilya E. Titkov, Sergey Yu. Karpov (STR Group), Amit Yadav, Denis Mamedov, Vera L. Zerova and Edik Rafailov*, Materials 2017, 10(11), 1323; doi: 10.3390/ma10111323 is now available online.
ICSCRM 2017
STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”
ACCGE-21 and OMVPE-18
At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3
ICNS 12
STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””