STR Group

 

STR provides software and consulting services for modeling of bulk crystal growth, epitaxy and semiconductor devices

 

Surface Recombination in Micro-LEDs

Coupled simulation of current spreading/crowding, LED self-heating, and carrier losses due to surface recombination in SimuLED software

Growth from Melt and Solution

CGSim software for analysis and optimization of Cz, LEC, VGF, Bridgman and other techniques for the growth of semiconductor and semitransparent crystals

Epitaxial stress in AlGaN

Analysis of of bow, stress, and dislocation density evolution during the epitaxy of AlGaN-based structures with STREEM-AlGaN software

SiC growth by PVT

Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling

ICSCRM 2017

ICSCRM 2017

STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”

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ACCGE-21 and OMVPE-18

ACCGE-21 and OMVPE-18

At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3

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ICNS 12

ICNS 12

STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””

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