Latest Software Updates

Modeling of CVI Process

On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.

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CGSim 20.0 Has Been Released

New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation

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CGSim 18.2 Has Been Released

STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution. 

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SiC Growth by TSSG

Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.

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Events

ICCGE-19

ICCGE-19

STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) in Keystone, Colorado, on July 28–August 2, 2019. Open full text for a list of 8 presentations

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ICNS-13

ICNS-13

On July 7-12, 2019, we will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington

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IWN 2018

IWN 2018

On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan

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IWMCG-9

IWMCG-9

On October 21-24, 2018 STR will be participating in International Workshop on Modeling in Crystal Growth (IWMCG-9) at Big Island, HI

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ECSCRM 2018

ECSCRM 2018

On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.

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