Latest Software Updates

VR 8.2 for PVT SiC

VR-PVT SiC has been updated. New features include automatic switching between phases in the powder source (pure carbon, graphitized SiC with simultaneous coexistence of SiC and carbon, or pure SiC), programmable variation of argon/nitrogen ratio in the gas, improved boundary shifting procedure in long-term growth.

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Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.

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Faster Problem Specification in Flow Module 3D

CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. 

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New Version of SiLENSe

SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.

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Tri-Halide VPE of GaN

Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.

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SpeCLED & RATRO Update for Micro-LEDs

SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.

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CGSim 20.1 Has Been Released.

A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:   Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....

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CGSim 20.0 Has Been Released

New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation

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Events

ACCGE-22 and OMVPE-20

ACCGE-22 and OMVPE-20

STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.

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Conference SMTBEA-2021

Conference SMTBEA-2021

On May 19-21, 2021, STR is participating in International Conference on “Sustainable Materials and Technologies for Bio and Energy Applications (SMTBEA-2021)”. Join the conference online and attend Andrey Smirnov’s talk “Numerical modeling in growth of oxide crystals from the melt” on Friday, May 21st at 3:30 p.m. Indian Standard Time.

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Semicon China 2021

Semicon China 2021

After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!

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Modeling of CVI Process

Modeling of CVI Process

On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.

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