STREEM Software for STRain Engineering in Electronic Materials

STREEM software is designed to fill in the missing link between the modeling of epitaxial recipe and device performance through the simulation and analysis of effects related to stress buildup and relaxation in the epitaxial stacks. The software has two editions – for AlGaN based structures and for InGaN. In case of AlGaN, the main focus is on optimization of the buffer layers by modeling evolution of stress, bow, and dislocation density during the growth. For InGaN, the software investigates the effect of stress and surface segregation on In incorporation into the growing layers.     

STREEM-AlGaN is a specialized software tool for self-consistent modeling of the evolution of stress and bow, as well as dislocation dynamics during the growth and cooling of (0001) III-Nitride heterostructures by MOCVD on silicon and sapphire wafers.

STREEM-InGaN is a specialized software tool for modeling the characteristics of (0001) III-Nitride device heterostructures grown by MOCVD from conventional metal-organic precursors (TMIn, TMGa/TEGa, TMAl) and ammonia, diluted in H2/N2carrier gases. STREEM-InGaN focuses on an InGaN-based active region which implies a sequence of quantum wells and barriers as well as other stages in-between. Layers grown prior to and after the active region can be added into the simulations as well.


“Impact of metalorganic vapor phase epitaxy growth conditions on compressive strain relaxation in polar III-nitride heterostructures” by Mikhail E. RudinskyAnna V. LobanovaSergey Yu. Karpov and Roman A. Talalaev, 2019 Jpn. J. Appl. Phys. 58 SC1017

“Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure” by Mikhail Rudinsky, Eugene Yakovlev, Roman Talalaev, Tomas Novak, Petr Kostelnik, and Jan Sik, joint work with ON Semi, Japanese Journal of Applied Physics 58, SCCD26 (2019)

“Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates” by M. RudinskyS. Y. KarpovH. LipsanenA. Romanov, Materials Physics and Mechanics, 24(3), 278-283 (2015).