Modeling of the Epitaxy of III-Vs

VR™ Nitride Edition is suitable for the modeling of the following reactor types:

  • Planetary reactors
  • High-speed rotation Turbodisc reactors
  • Horizontal reactors
  • Close-coupled showerhead reactors
  • Home-made reactors that can be simulated within a 2D plane or axisymmetric model

Software includes the following readily available chemical models:

  • Arsenides
    • InAs epitaxy from TMIn and AsH3 or TBAs
    • GaAs epitaxy from TMGa and AsH3 or TBAs
    • AlAs epitaxy from TMAl and AsH3
    • InxGa1-xAs epitaxy from TMIn, TMGa, and AsH3 or TBAs
    • InxAl1-xAs epitaxy from TMIn, TMAl, and AsH3
    • AlxGa1-xAs epitaxy from TMAl, TMGa, and AsH3
    • InxGayAl1-x-yAs epitaxy from TMIn, TMGa, TMAl, and AsH3
  • Phosphides
    • InP epitaxy from TMIn and PH3 or TBP
    • GaP epitaxy from TMGa and PH3 or TBP
    • AlP epitaxy from TMAl and PH3
    • InxGa1-xP epitaxy from TMIn, TMGa, and PH3 or TBP
    • InxAl1-xP epitaxy from TMIn, TMAl, and PH3
    • AlxGa1-xP epitaxy from TMAl, TMGa, and PH
    • InxGayAl1-x-yP epitaxy from TMIn, TMGa, TMAl, and PH3
  • Mixed Group-V Compounds
    • InAsP epitaxy from TMIn, AsH3, and PH3
    • GaAsP epitaxy from TMGa, AsH3, and PH3
    • AlAsP epitaxy from TMAl, AsH3, and PH3
    • InGaAsP epitaxy from TMIn, TMGa, AsH3, and PH3
    • InAlAsP epitaxy from TMIn, TMAl, AsH3, and PH3
    • AlGaAsP epitaxy from TMAl, TMGa, AsH3, and PH3
  • Doping
    • AlxGa1-xAs, GaAs, and AlAs doping by Si from SiH4
    • InxGa1-xP, InxAl1-xP, InP, GaP, and AlP doping by Mg from MgCp2

For different precursors, please, ask us directly. The software is constantly developing and some models can already be available or might be added.

Publications

Models and mechanisms:

  1. R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov,
    ”On low temperature kinetic effects in metal –organic vapor phase epitaxy of III –V compounds”, Journal of Crystal Growth 230, 232 (2001)
  2. S.Yu. Karpov, E.V. Yakovlev, R.A. Talalaev, Yu.A. Shpolyanskiy, Yu.N. Makarov, S.A. Lowry,
    ”Quasi-thermodynamic models of surface chemistry: application to MOVPE of III-V ternary compounds”, Electrochemical Society Proceedings, Vol. 2000-13, p.723-730, (2000)
  3. F.Durst, L.Kadinski, Yu.N.Makarov, M.Schäfer, M.G.Vasil’ev, V.S.Yuferev,
    ”Advanced mathematical models for simulation of radiative heat transfer in CVD reactors”, Journal of Crystal Growth, Vol.172, p.385-395
  4. L.Kadinski, Yu.N.Makarov, M.Schäfer, M.G.Vasil’ev, V.S.Yuferev,
    ”Development of advanced mathematical models for numerical calculations of radiative heat transfer in metalorganic chemical vapour deposition reactors”, Journal of Crystal Growth, Vol.146, p.209-213, (1995)

 

III-V growth in the Horizontal and Planetary Reactors:

  1. S. Yu. Karpov,
    ”Advances in the modeling of MOVPE processes”, J. Crystal Growth, Vol.248, p.1-7, (2003)
  2. E.V. Yakovlev, Y.A. Shpolyanskiy, R.A. Talalaev, S.Y. Karpov, Y.N. Makarov, T. Bergunde, and S.A. Lowry,
    “Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary compounds in Production-Scale AIX 2400G3 Planetary Reactor”, Electrochemical Society Proceedings 2001-13, 292 (2001)
  3. E.V. Yakovlev, R.A. Talalaev, S.Yu. Karpov, Yu.A. Shpolyanskiy, Yu.N. Makarov, S.A. Lowry,
    ”Comprehensive reactor-scale modeling of III-V ternary compound growth by MOVPE”, Mat. Res. Soc. Symp. Proc., Vol.616, p.153-158, (2000)
  4. M. Dauelsberg, L. Kadinski , Yu.N. Makarov , T. Bergunde , G. Strauch, M. Weyers,
    ”Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor”, Journal of Crystal Growth, Vol.208, p.85-92, (2000)
  5. T.Bergunde, M.Dauelsberg, L.Kadinski, Yu.N.Makarov, M.Weyers, D.Schmitz, G.Strauch,
    ”Heat transfer and mass transport in multiwafer MOVPE reactor: modelling and experimental studies”, Journal of Crystal Growth, Vol. 170, p.66-71, (1997) 
  6. T.Bergunde, M.Dauelsberg, L.Kadinski, Yu.N.Makarov, V.S.Yuferev, D.Schmitz, G.Strauch, H.Jürgensen,
    ”Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation”, Journal of Crystal Growth, Vol.180, p.660-669, (1997) 
  7. T.Bergunde, M.Dauelsberg, L.Kadinski, Yu.N.Makarov, G.Strauch, H.Jürgensen,
    ”Modelling and process optimization in a radial flow multiwafer MOVPE reactor”, Society Proceedings, Vol. 97-25, p.230-237, (1997)
  8. T.Bergunde, D.Gutsche, L.Kadinski, Yu.Makarov, and M.Weyers,
    ”Transport and reaction behaviour in Aix-2000 Planetary MOVPE reactor”, Journal of Crystal Growth, Vol.146, p.564-569, (1995)
  9. T.Bergunde, M.Dauelsberg, Yu.Egorov, L.Kadinski, Yu.N.Makarov, M.Schäfer, G.Strauch, M.Weyers,
    ”Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor”, Simulation of Semiconductor Devices and Processes, Vol.6, edited by H.Ryssel, P.Pichler, p.328-331, (1995) 
  10. T.Bergunde, M.Dauelsberg, Yu.Egorov, L.Kadinski, Yu.N.Makarov, M.Schäfer, G.Strauch, M.Weyers,
    ”Modelling of growth in a 5×3 inch multiwafer metalorganic vapour phase epitaxy reactor”, Journal of Crystal Growth, Vol. 145, p.630-635, (1994)