Modeling of Semiconductor Devices

 

STR offers dedicated software tools for modelling and optimization of optoelectronic and electronic semiconductor devices:

SiLENSe for 1D drift-diffusion analysis of electron and hole injection into the active region and their radiative and non-radiative recombination. Several recombination channels are considered including Auger recombination and recombination on threading dislocations inherent in Group-III nitride heterostructures.

SpeCLED for 3D analysis of current crowding and temperature distribution in the LED dice fabricated on either insulating or conductive substrate. It supports simulation of planar and vertical chips with one-side and two-side electrode configurations, blocking and ITO-like spreading layers. SpeCLED uses the computational results obtained by SiLENSe to specify the current density as a function of local bias applied to the active region. 

RATRO is a 3D ray-tracing simulator of light propagation, absorption, and extraction from the LED die. RATRO uses the information on the light emission intensity distribution in the LED active region obtained by SpeCLED and computes the light intensity distribution over all the die surfaces, the far-field distribution, and integral chip characteristics like extraction efficiency, total light output, light polarization, etc. 

BESST software for bandgap engineering in superlattices

FETIS software for modeling of high-electron mobility (HEMT) and field-effect (FET) transistors:
– HEMTs and FETs made of III-nitride and II-oxide semiconductors

PVcell for photovoltaic cell heterostructures:
– III-nitride and hybrid III-N/Si and III-N/III-V SCs
– cascade SCs based on conventional III-V semiconductors