Modeling of Bulk Crystal Growth

For the modeling and analysis of bulk crystal growth STR offers two software packages: VR software for modeling of the growth from the vapor phase and CGSim software for modeling of the growth from the melt and solution. Among general capabilities, software can be used for detailed heat transfer modeling including radiant heat in semi-transparent crystals, simulation of gas and melt flow, crystal shape evolution, dislocation density and residual stress during the growth and cooling. Description of process-specific features can be found at the dedicated pages, see the list below.

Benefits of Modeling in the Growth of Bulk Crystals

Growth of bulk crystals is very time consuming. It is usually associated with high or extremely high temperatures and is notoriously challenging for non-disruptive in situ monitoring. These characteristics dictate some specific benefits of modeling:

  • Expedited R&D process with different scenarios computed simultaneously
  • No costs and waiting period associated with ordering new parts for testing hardware modifications
  • No material and energy costs of virtual experiments
  • Provides opportunity to try concepts that are tricky or costly to implement
  • Contribution of specific factors/forces can be isolated by “switching on and off” in simulations
  • Virtual monitoring: data on all physical variables used in modeling is readily accessible, for instance, melt velocities and temperature distribution