VR-PVT SiC 8.2 has been released. The main updates are as follows:

  • A new model of SiC powder source has been developed. this model did not consider the powder recrystallization accurately. Namely, the old model has been extended to better accommodate the effects related to the powder recrystallization. The new model provides switching between three possible states of the powder granules: pure carbon, graphitized SiC (i.e. simultaneous coexistence of SiC and carbon), or pure SiC.
  • Variation of argon/nitrogen ratio in the gas can now be adjusted during the long-term growth of SiC crystals. Values of the relative molar fractions can be assigned as user-defined functions of time.
  • Finally, the boundary shifting procedure has been improved to increase the stability of automatic geometry adjustment while tacking the crystal shape evolution in long-term growth.