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Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Mar 15, 2020

Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and 2019 International Forum on Wide Bandgap Semiconductors can be viewed online: Modeling of SiC crystal growth and epitaxy and simulation of GaN Metal Organic Vapor Deposition

Recent Posts

  • Virtual Reactor 8.1 Released
  • Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides
  • CGSim 20.1 Has Been Released.
  • Modeling of CVI Process
  • CGSim 20.0 Has Been Released

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