On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan. 

You are very welcome to visit our booth or see our reports, see below.

“Effect of die shape and size on performance of µ-LEDs” by Kirill Bulashevich, Sergey Konoplev, and Sergey Karpov. More information on the software used for this work can be found here 

“Impact of growth conditions on critical thickness of polar InGaN/GaN heterostructures” by Mikhail Rudinsky, Sergey Karpov, and Roman Talalaev. See STREEM InGaN page for more information on the software