STR Group

 

STR provides software and consulting services for modeling of bulk crystal growth, epitaxy and semiconductor devices

 

Surface Recombination in Micro-LEDs

Coupled simulation of current spreading/crowding, LED self-heating, and carrier losses due to surface recombination in SimuLED software

Growth from Melt and Solution

CGSim software for analysis and optimization of Cz, LEC, VGF, Bridgman and other techniques for the growth of semiconductor and semitransparent crystals

Epitaxial stress in AlGaN

Analysis of of bow, stress, and dislocation density evolution during the epitaxy of AlGaN-based structures with STREEM-AlGaN software

SiC growth by PVT

Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling

Conference SMTBEA-2021

Conference SMTBEA-2021

On May 19-21, 2021, STR is participating in International Conference on “Sustainable Materials and Technologies for Bio and Energy Applications (SMTBEA-2021)”. Join the conference online and attend Andrey Smirnov’s talk “Numerical modeling in growth of oxide crystals from the melt” on Friday, May 21st at 3:30 p.m. Indian Standard Time.

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Intrinsic Carbon Doping

Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.

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Faster Problem Specification in Flow Module 3D

Faster Problem Specification in Flow Module 3D

CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. 

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Semicon China 2021

Semicon China 2021

After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!

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New Version of SiLENSe

New Version of SiLENSe

SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.

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Tri-Halide VPE of GaN

Tri-Halide VPE of GaN

Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.

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SpeCLED & RATRO Update for Micro-LEDs

SpeCLED & RATRO Update for Micro-LEDs

SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.

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CGSim 20.1 Has Been Released.

CGSim 20.1 Has Been Released.

A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:   Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....

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Modeling of CVI Process

Modeling of CVI Process

On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.

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CGSim 20.0 Has Been Released

CGSim 20.0 Has Been Released

New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation

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ICSCRM 2019

ICSCRM 2019

On September 29 – October 4 STR will participate in (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition! 

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ICCGE-19

ICCGE-19

STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) in Keystone, Colorado, on July 28–August 2, 2019. Open full text for a list of 8 presentations

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ICNS-13

ICNS-13

On July 7-12, 2019, we will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington

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IWN 2018

IWN 2018

On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan

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IWMCG-9

IWMCG-9

On October 21-24, 2018 STR will be participating in International Workshop on Modeling in Crystal Growth (IWMCG-9) at Big Island, HI

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ECSCRM 2018

ECSCRM 2018

On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.

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CGSim 18.2 Has Been Released

CGSim 18.2 Has Been Released

STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution. 

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CIMTEC 2018

CIMTEC 2018

June 4 to 14, 2018, STR will participate in CIMTEC 2018 – 14th International Conference on Modern Materials and Technologies – in Perugia, Italy 

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