STR Group

 

STR provides software and consulting services for modeling of bulk crystal growth, epitaxy and semiconductor devices

 

Growth from Melt and Solution

CGSim software for analysis and optimization of Cz, LEC, VGF, Bridgman and other techniques for the growth of semiconductor and semitransparent crystals

Epitaxial stress in AlGaN

Analysis of of bow, stress, and dislocation density evolution during the epitaxy of AlGaN-based structures with STREEM-AlGaN software

SiC growth by PVT

Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling

CGSim 20.1 Has Been Released.

CGSim 20.1 Has Been Released.

A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:   Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....

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Modeling of CVI Process

Modeling of CVI Process

On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.

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CGSim 20.0 Has Been Released

CGSim 20.0 Has Been Released

New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation

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ICSCRM 2019

ICSCRM 2019

On September 29 – October 4 STR will participate in (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition! 

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ICCGE-19

ICCGE-19

STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) in Keystone, Colorado, on July 28–August 2, 2019. Open full text for a list of 8 presentations

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ICNS-13

ICNS-13

On July 7-12, 2019, we will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington

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IWN 2018

IWN 2018

On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan

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IWMCG-9

IWMCG-9

On October 21-24, 2018 STR will be participating in International Workshop on Modeling in Crystal Growth (IWMCG-9) at Big Island, HI

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ECSCRM 2018

ECSCRM 2018

On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.

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CGSim 18.2 Has Been Released

CGSim 18.2 Has Been Released

STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution. 

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CIMTEC 2018

CIMTEC 2018

June 4 to 14, 2018, STR will participate in CIMTEC 2018 – 14th International Conference on Modern Materials and Technologies – in Perugia, Italy 

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CS MANTECH 2018

CS MANTECH 2018

STR will participate in exhibition at CS MANTECH conference that will be held in Austin, Texas on May 7th – 10th, 2018. See www.csmantech.org for details.

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SiC Growth by TSSG

SiC Growth by TSSG

Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.

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ICSCRM 2017

ICSCRM 2017

STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”

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ACCGE-21 and OMVPE-18

ACCGE-21 and OMVPE-18

At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3

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ICNS 12

ICNS 12

STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””

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