Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling
CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module.
After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!
SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.
Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.
SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.
A new version includes new features for modeling of both epitaxy and bulk crystal growth.
Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and International Forum on Wide Bandgap Semiconductors can be viewed online
A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows: Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....
On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.
New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation
On September 29 – October 4 STR will participate in (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition!
Have a look at the list of updates
STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) in Keystone, Colorado, on July 28–August 2, 2019. Open full text for a list of 8 presentations
On July 7-12, 2019, we will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington
On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan
On October 21-24, 2018 STR will be participating in International Workshop on Modeling in Crystal Growth (IWMCG-9) at Big Island, HI
On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.
STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution.
June 4 to 14, 2018, STR will participate in CIMTEC 2018 – 14th International Conference on Modern Materials and Technologies – in Perugia, Italy
STR will participate in exhibition at CS MANTECH conference that will be held in Austin, Texas on May 7th – 10th, 2018. See www.csmantech.org for details.
Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.