|
|
|
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Bruĺckner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler
Journal of Crystal Growth 277 (2005) 6–12 (01) |
 |
| In total, 120 micron thick GaN layers without cracks have been grown on 2 in
sapphire substrates by hydride vapor phase epitaxy. This has been achieved
by optimization of the flow patterns in the reactor based on 3D process
modelling, choice of the growth parameters especially the carrier gas
composition and the usage of suitable GaN/sapphire templates. An important
finding is that an H2 content of around 50% in the N2 carrier yields the
lowest crack density. |
|
|
|
|
|
|
Subscribe to STR Newsletter
here
Download free Software DEMO Versions and Documentation
here
Useful Links
|
|
