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Effect of Free-Carrier Absorption on Performance of 808 nm AlGaAs-Based High-Power Laser Diodes
K.A. Bulashevich, V.F. Mymrin, S.Yu. Karpov
Semcond. Sci. Technol. 22, No 5, 502-510 (2007) (08) |
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| We examine effects of free-carrier absorption produced by non-equilibrium
electrons and holes injected in the waveguide on characteristics of high-power AlGaAs-
based laser diodes emitting light at 808 nm. The carrier transport in the laser
heterostructures is studied theoretically, using the drift-diffusion numerical approach.
On the basis of simulations, a relation between the current density and non-equilibrium
carrier concentrations in the waveguides is found. The internal optical losses of
the waveguide modes, and their effect on the differential quantum efficiency of
the laser diodes are estimated from the computed carrier concentrations. Some
approaches aimed at reducing the free-carrier absorption and, thus, improving the laser
performance are discussed. The theoretical predictions are compared with available
data to validate the theoretical model and justify the conclusions coming from the
simulations. |
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