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Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode
K.A. Bulashevich, I.Yu. Evstratov, V.N. Nabokov, S.Yu. Karpov
Appl. Phys. Lett 87, No. 24, 243502 (2005) (15) |
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| Using simulations, we have examined specific features of a hybrid n-ZnO/p-AlGaN light-emitting diode
(LED) operation, originated from a type-II band alignment and a negative polarization charge at the
ZnO/AlGaN interface. These factors are found to improve the carrier confinement near the interface and
to affect significantly the light emission spectra and internal quantum efficiency of the LED. The
theoretical predictions are compared with available observations. |
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