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Algorithms and models for simulation of MOCVD of III-V layers in the planetary reactor.
Bergunde T., Dauelsberg M., Egorov Yu., Kadinski L., Makarov Yu.N., Schafer M., Strauch G., Weyers M.
Simulation of Semiconductor Devices and Processes, V.6, P.328-331 (01)
Advances in development of mathematical models and numerial techniques for modelling of MOCVD in the Planetary Reactor are presented. Importance of coupled flow and mass transport calculations, accurate modelling of radiative heat transfer and complex chemical interactions is discussed. Advantages and disadvantages of block-structured and unstructured grid algorithms arc considered.
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