STR Group

Modeling of Crystal Growth and Devices

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PRODUCTS
SimuLED (LED&LD)
CGSim (melt)
CVDSim (epi)
PolySim (Siemens)
Virtual Reactor
SiLENSe (LED&LD)
SpeCLED (LED)
RATRO (LED)
BESST (III-N SLs)
FETIS (HEMTs)
PVcell
STREEM AlGaN
STREEM InGaN


Software for Modeling of Chemical Vapor Deposition

CVDSim, software tool for modeling of epitaxy, including Metal-Organic Vapor Phase Epitaxy of GaN-, InN- and AlN-based materials (III-nitride MOCVD), Metal-Organic Vapor Phase Epitaxy of arsenides and phosphides (III/V MOCVD), GaN growth by Hydride Vapor Phase Epitaxy (III-nitride HVPE), silicon carbide epitaxy, silicon epitaxy

HEpiGaNS (Hydride Epitaxial GaN Simulator) is the software tool designed for modeling of GaN crystal growth by hydride vapor phase epitaxy (HVPE) using advanced models of surface kinetics important for adequate predictions of the growth

Software for Modeling of Bulk Crystal Growth


CGSim (Crystal Growth Simulator) is the Crystal Growth Simulator, a tool for heat transport analysis and control of crystal growth by the Czochralski (Cz), LEC, and VCz methods

ViR (Virtual Reactor) is the software package designed as a computer simulator of long-term growth of bulk SiC and AlN crystals by sublimation
 

Software for Device Modeling


SimuLED is an engineering tool for LED and laser diode design and optimization, consisting of 3 compatible software tools:

  • SiLENSe (Simulator of Light Emitters based on Nitride Semiconductors) is the simulator of Light Emitters based on III-nitrides, II-oxides, and hybrid MgZnO/AlGaN heterostructures
  • SpeCLED (Spreading of Current in Light Emitting Diodes) is the package for 3D modeling of current spreading and temperature distribution in LED chips
  • RATRO (RAy-TRacing SimulatOr of Light Propagation) is the software tool for 3D modeling of light extraction from LED chips.

BESST (Bandgap Engineering Superlattice Simulation Tool) is the package for simulation of optoelectronic devices based on group-III nitride superlattices

FETIS (Field Effect Transistor Integrated Simulator) is the simulator of band diagrams and characteristics of III-nitride FETs
 

STREEM: STRain Engineering in Electronic Materials
STREEM AlGaN is a specialized software tool for self-consistent modeling of the evolution of stress and bow, as well as dislocation dynamics during the growth and cooling of (0001) III-Nitride heterostructures by MOCVD
 
STREEM InGaN is a specialized software tool for modeling the characteristics of (0001) III-Nitride device heterostructures grown by MOCVD with the account of indium surface segregation and stress relaxation.
 

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