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Modeling of Crystal Growth and Devices

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Fig. 1. Specification of the growth system in VR-CVD SiC

Fig. 2. Temperature distribution and flow pattern

Fig. 3. Si partial pressure distributions in the growth region. Growth from SiCl4 and C3H8

Fig. 4. C2H2 partial pressure distributions in the growth region. Growth from SiCl4 and C3H8

Fig. 5. Comparison with experiment: growth rate vs. C3H8 flow rate. Experiment: S. Nigal et al., JCG 284, 112 (2005).

VR-CVD SiC is designed for modeling of SiC bulk crystal growth by Chemical Vapor Deposition.

Global Heat Transfer Problem in a System for SiC Crystal Growth

  • Inductive heating. The computation of the Joule heat sources due to inductive heating is carried out by solving the Maxwell equations.
  • Conductive heat transfer in solid materials. The thermal conductivity of the materials used in the growth system can be prescribed by the user as a function of temperature. Anisotropic thermal conductivity can be assigned.
  • Convective and radiative heat transfer in transparent gas blocks. The view-factor technique is used to model the radiation heat exchange.

Species Transport in the Reactor

  • Non-isothermal flow of gas mixture.
  • Multi-component diffusion of reactive species.
  • Homogeneous chemistry involving chemical decomposition of the precursors.
  • Support of 2 types of precursors: Hydrides (C3H8 and SiH4) and Chlorides (C3H8 and SiCl4).
  • Prospective Development: Support of growth from C3H8 and SiH2Cl2 precursors.

Heterogeneous Chemical Processes

  • Chemically reactive surfaces of the seed, growing crystal and reactor side walls. A quasi-thermodynamic model is used to describe the mass exchange between the vapor and solid surface.
  • Crystal and wall deposit evolution during the growth within the quasi-stationary approximation.

Crystal Characterization

  • Computation of the thermal stress distribution in the crystal, including the density of gliding dislocations in the crystal calculated on the assumption of a full stress relaxation due to plastic deformation.
  • Analysis of the propagation of threading dislocations from the seed into the growing crystal. It includes 2D propagation of dislocations originating from the seed in a selected vertical crystal cross-section and 3D analysis yielding the dislocation outcrop mapping in a set of horizontal crystal cuts.

Available Configurations
VR-CVD SiC is supplied in the following configurations:

  • Steady State
  • Basic Configuration (Long Term Growth)
  • Basic Configuration with the Threading Dislocations Module

Hot-line support is provided on request. The support includes free of charge supply of updated versions released during the license period and technical consulting on the VR-CVD SiC operation.



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