Features Added in SpeCLED + RATRO 2008

SpeCLED 2008 and RATRO 2008 have been radically modified compared to SpeCLED 3.0 with RATRO 1.2. Detailed description of the operation with SpeCLED 2008 and RATRO 2008 can be found in the SpeCLED 2008 Getting Started, SpeCLED 2008 Getting Started and SpeCLED - RATRO Graphical User Interface Reference Guide documents. The main new features are listed below in brief.

1. Support of New Die Elements in SpeCLED

• A current spreading layer like ITO placed on the p-contact layer is available.
• Substrate was included into the computational domain. Current spreading and heat transfer in conducting substrates and heat transfer in insulating substrates are supported.
• Electrode pads were included into the computational domain. Voltage drop inside the pads is taken into account.

2. Modification of the SpeCLED + RATRO Graphical User Interface

• The way of specification of the die design was considerably modified (see SpeCLED - RATRO Graphical User Interface Reference Guide, sections Chip Configuration Dialog Window and Layers Tab Window).
• Manual input of the active region properties was implemented (see SpeCLED -RATRO Graphical User Interface Reference Guide, section Manual Specification of I-V Characteristics)
• Manual specification of the computational grid in vertical dimension was implemented (see SpeCLED -RATRO Graphical User Interface Reference Guide, section Chip Configuration Dialog Window).

3. Support of New Options in RATRO

• Stand-alone RATRO software tool now can be used without SpeCLED. Specification of the die geometry is made within RATRO graphical user interface. In this case uniform emission distribution from the active region is assumed.
• New models of the die surfaces were implemented (see SpeCLED - RATRO Graphical User Interface Reference Guide, section RATRO Tab Window - Surface Models): a model of a multiple metal layer contacts to be applied to p- and n-electrodes and a model of regularly patterned surfaces to be applied to free semiconductor or substrate surfaces.
• Specification of wavelength dependence of refraction and absorption indices of the semiconductor, substrate and epoxy materials was implemented (see SpeCLED - RATRO Graphical User Interface Reference Guide, section RATRO Tab Window - Bulk Properties).
• Light polarization model was implemented.
• Both isotropic and Lambert laws of emission from the active region are supported.

For more detailed information see History Notes for SpeCLED + RATRO 2008

Features Added in SpeCLED 3.0

SpeCLED can now account for the current blocking by insulating layers made of dielectric materials which are formed between metallic electrodes and contact layers of an LED heterostructure to control the current pattern. Both n-blocking layer and p-blocking layer can be considered.

For more detailed information see History Notes for SpeCLED 3.0

Features Added in SpeCLED 2.1

New version of SpeCLED supports import of the die geometry from DXF files and series computations (calculation of the whole current-voltage characteristics in a single run), and provides an advanced way of specification of the active region IQE dependency on the total current accounting for the temperature effect. For more detailed information download History Notes for SpeCLED 2.1

New Demo versions and examples are also available for downloading.