SiLENSe Version 4.2 & Version 4.2 Laser Edition has been released.

New options include:

Material properties of zinc blende III-V compounds were updated. Particularly, AlGaInP and GaInAsP alloys lattice matched to GaAs are added, as well as respective simulation examples.

After computation of the emission spectrum, detailed information about contribution of each subband of the valence band is available, as well as contribution of each particular transition. Use ‘Window->Detailed Spectrum’ menu item and enjoy complete information about the emission spectrum!

Carrier non-radiative lifetimes related to dislocations and point defects are available both in the internal visualization and in export ASCII files.

SiLENSe Version 4.1 & Version 4.1 Laser Editionhas been released.

New options include:

Material properties of InAlGaAs alloy and simulation example for AlGaAs laser diode are added.

Material properties of CdMgZnO alloy and simulation examples for hybrid II-O/III-N heterostructures are updated.

Computation of the band diagram, carrier energy levels and wave functions under reverse bias (see Sec. 11 of SiLENSe Physics Summary). NB! This option does not include prediction of the reverse current!

Computation of the internal quantum efficiency taking into account only emission from the active region, and computation of the injection efficiency (see end of Sec. 7 of SiLENSe Physics Summary).

SiLENSe Version 4.0 & Version 4.0 Laser Edition has been released.

New options as compared to version 3.60 Laser Edition are as follows:

Simulation of nonpolar and semipolar orientations. The user can choose the orientation in the respective combo box in the ‘Heterostructure’ tab. To calculate the piezoelectric fields in semipolar structures, new material ptoperties were introduced: lattice constant c, piezoelectric constant e₁₅, and stiffness constants C₁₁, C₁₂, and C₄₄.

NB! It is strongly recommended to add new material properties in the files created by earlier versions, use ‘Material Properties->Import’ menu item and choosing default database supplied with the current version of the software.

Substrate’ section is removed from the ‘Heterostructure’ tab. Instead, the user should indicate if the first heterostructure layer is strained¹. If yes, one should specify its lattice constants a and c. The option of input of the substrate lattice constant by composition is removed. By default, all files newly created or converted from older versions are assumed to have relaxed first layer. If you see a warning about the lattice constant specification during opening old project file, please check the input data in the ‘Strain in the first layer’ section in the center of the ‘Heterostructure’ tab.

Changes in the user interface:

• Export of plots to graphic files (*.bmp, *.wmf, and *.emf) is available by ‘Export->Save current chart’ menu item.
• Visualization of the layer properties (doping, mobility, dislocation density, carrier lifetimes, etc) in the bottom chart of the ‘Heterostructure’ window.
• Two solver parameters are made read-only: ‘Potential solver parameter’ and ‘Fermi level solver parameter’.

___________________
¹ First layer appearing in the heterostructure list is a thick n-type layer, usually made of GaN. Typically, it is not strained. The user need not input the nucleation and buffer layers in the heterostructure list.

 

SiLENSe 3.60 Laser Edition has been released on July 2-nd, 2008

New options as compared to version 3.42 Laser Edition are as follows:

• Temperature dependence of the energy gap is described in terms of Varshni parameters a and b. However, SiLENSe project files (*.sls ) of older versions will be converted as having temperature-independent energy gap (a=0, b=1), to provide backward compatibility of the results. The user can update material properties by using "Materials Properties -> Import" menu item.
• Model of Indium composition fluctuations on the IQE. SiLENSe project files (*.sls ) of older versions will be converted as having no fluctuations (Un=Up=0) to provide backward compatibility of the results.
• Some improvements are made in the user interface. Particularly, we have added internal visualization of the following variables: unstrained and strained in-plane lattice constants, strain, spontaneous polarization, piezoelectric polarization, and total polarization.

 

SiLENSe 3.42 Laser Edition has been released on February 4-th, 2008

New options as compared to version 3.4 include:

• Computation, visualization, and export of the far field distribution (available in Laser Edition only);
• Support of network corporate/department HASP license;
• No limitation on the maximum number of the points in the quantum well in computation of the carrier wave functions;
• A number of improvements in the user interface.

 

SiLENSe 3.4 Laser Edition has been released on May 28-th, 2007

New options as compared to version 3.0 include:

• Computation of the gain spectrum.
• Visualization of the emission and gain spectra of individual quantum wells (the previous version shows the total spectrum only).
• Listing of the overlap integrals between each pair of electron and hole wave functions in the active region.
• A number of improvements in the user interface.

The following options are available in Laser Edition only:

• Computation and visualization of the waveguide mode intensity distribution for both TE and TM polarizations with account for the birefringence in wurtzite crystals. Computation of the optical confinement factors.
• Analysis of the laser diode operation for selected waveguide mode: optical gain, optical losses caused by the free carrier absorption, threshold current and differential quantum efficiency.
• Updated database of materials properties to include optical characteristics of III-nitride materials.

NB: To run laser computations for the project files of version 3.0 and older one should previously update the materials properties to add optical properties! Use the Materials Properties I Import menu item and select an appropriate file with materials properties. The default database is provided with the package, and the user can modify it via the Properties Editor tool.

 

SiLENSe 3.0 has been released on September 8-th, 2006

This section describes new options in the SiLENSe™ 3.0 package compared to version 2.1:

1. Non-radiative recombination through the point defects is calculated within the Shokley-Read-Hall model. The user can manually specify the electron and hole lifetimes in each layer of the heterostructure.
2. Auger recombination. This option is included in order to enable the user to analyze conventional III-V heterostructures where Auger recombination is important channel of non-radiative recombination.
3. Partial strain relaxation is included for accurate calculation of the piezoelectric charges at the boundaries of partially relaxed layers. The user can manually specify the degree of relaxation for each layer of the heterostructure.
4. Export/import of material properties. The user can save the materials properties of the existing SiLENSe™ project (*.sls) in a separate material database file (*.mats) as well as load new material properties to the existing SiLENSe™ project from other database files or other SiLENSe™ projects.
5. The project files of 2.1 version are converted as follows:
6. The user can specify different threading dislocation density for different layers.
   • For each layer:
     • zero degree of relaxation:
     • no additional recombination via point defects
     • dislocation density taken from the old file
   • Zero Auger coefficients are added to material properties of all materials and alloys listed in the project file.
   • In the saved results all the total non-radiative recombination is suggested to come from the dislocations.
   Under these conditions re-running an old project file with version 3.0 will give the same result as for 2.1 version.