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Modeling of Crystal Growth and Devices

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News archive
2010.02.05 AIXTRON published a paper discussing how multiphysics modeling, employing models developed in collaboration with STR, allows one to reduce production costs and enhance process performance, see the article in EuroAsia semiconductor.

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2010.01.12 SiLENSe 4.2 Laser Edition has been released. New version includes material properties of AlGaInP alloys and detailed information on contribution of different transitions to the emission spectrum.

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2009.12.15 CGSim package used by leading makers of sapphire Ky and Cz crystals is now extended to perform 3D unsteady modeling of crystal seeding and body growth. New 3D options allows one to optimize wafer quality and crystal growth stability with the comprehensive analysis of unsteady melt flow features and crystallization dynamics, see Kyropoulos Sapphire page for details.

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2009.10.16 Bridgelux -- manufacturer of LED chips based in California -- is now a user of STR software for modeling of light emitting diodes.

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2009.08.26 SiLENSe 4.1 Laser Edition has been released. New version includes updated material properties of InAlGaAs and ZnMgCdO alloys, as well as simulation of the band diagram, carrier energy levels and wave functions at reverse bias.

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