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| 2010.05.16 |
STR will participate in the ICMOVPE-15 opening on May 23rd in Lake Tahoe, California. The following materials will be presented: "Single QW Deep-Green Leds with Buried InGaN/GaN Short-Period Superlattice", "AlGaN Gr. Rate and Comp. in a Close-Coupled Showerhead MOVPE Reactor", "Investigation of Nitride MOVPE at High Pressure and High Gr. Rates in Large Production Reactors by a Combined Modelling and Experimental Approach". See abstracts.
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| 2010.05.07 |
Prof. Koichi Kakimoto (Kyushu University, Japan) and Dr. Vladimir Kalaev (STR Group, Russia) will give lectures on state of the art computer modeling of the Cz Si, DS Si, and flux GaN crystal growth techniques during a seminar in SimSciD Corp. (Yokohama, Japan) on May 14th, 2010. There will be also presentations on CGSim and VR software by SimSciD. To participate in the seminar or to get printed materials free of charge, please, contact Mr. Yoshiki Tsukada (www.simscid.co.jp).
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| 2010.04.21 |
Dr. Karpov and Dr. Ramm will talk about STR engineering tools for device modeling SimuLAD and SimuLAMP at seminars in China. Seminars will take place in Beijing and Shenzhen on May 20th and 21st 2010.
Additional information is available on Pitotech web-site:
www.pitotech.com/party.php
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| 2010.02.05 |
AIXTRON published a paper discussing how multiphysics modeling, employing models developed in collaboration with STR, allows one to reduce production costs and enhance process performance, see the article in EuroAsia semiconductor.
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| 2010.01.12 |
SiLENSe 4.2 Laser Edition has been released. New version includes material
properties of AlGaInP alloys and detailed information on contribution of
different transitions to the emission spectrum.
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