Operation of Al-In-Ga-N single-quantum-well or multiple-quantum-well light emitting diodes (LEDs) is considered in terms of 1D drift-diffusion model of carried injection. We provide band diagram of an LED, build-in electric field, distributions of electron and hole concentrations across the structure as well as those of the radiative and non-radiative recombination rates, as a function of bias. I-V characteristic and light emission efficiency is computed to assess the LED structure performance.

Band diagrams of a SQW-AlGaN/InGaN/GaN
blue LED structure at different forward biases.

The light emission spectra are found from the coupled solution of the Poisson and Scrodinger equations with account of the complex valence band structure of the nitride.

Emission spectra at various biases
and light emission efficiency as a function of LED current.