We use the 1D drift-diffusion model to simulate the nitride LED operation. The model includes the Poisson equation for the electric potential and the continuity equations for the electron and hole currents. Fermi-Dirac statistics is used for both electron and holes. Spontaneous and piezo- polarization important for group-III nitrides is accounted for in the boundary conditions for the Poisson equation. We consider the non-radiative carrier recombination on threading dislocation cores using the original approach [1] relating the recombination rate with the dislocation density.

Coupled solution of the Poisson and Schrodinger equations is used to find the light emission spectra from the LED active region. The Kohn-Luttinger approach is used to consider the complex valence band structure. A uniform broadening of the emission spectra is currently assumed. We plan to account for the In composition fluctuation in the InGaN quantum well in the nearest future.

[1] S.Yu.Karpov and Yu.N.Makarov, Appl.Phys.Lett. 81 (2002) 4721.