STR, Inc. starts the research on modeling of advanced semiconductor devices - light emitting diodes (LEDs), laser diodes, heterojunction bipolar transistors (HBT), high-electron mobility transistors (HEMTs), Schottky diodes, etc. - aimed at understanding their characteristics as a function of the grown structures. The strategy of the research implies eventually finding correlations between the device characteristics and the growth conditions of specific device structures, which will be done step by step. The first step is the development of particular device models. The second step to be performed in the nearest future implies coupling the device structure growth models with predictions of the device characteristics. A far goal is prediction of defects in the grown material and their influence on the device properties.