STR Group - Modeling of crystal growth and devices

STR Group

Modeling of Crystal Growth and Devices

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Device Modeling

2010.05.16 STR at ICMOVPE-15

STR will participate in the ICMOVPE-15 opening on May 23rd in Lake Tahoe, California. The following materials will be presented: "Single QW Deep-Green Leds with Buried InGaN/GaN Short-Period Superlattice", "AlGaN Gr. Rate and Comp. in a Close-Coupled Showerhead MOVPE Reactor", "Investigation of Nitride MOVPE at High Pressure and High Gr. Rates in Large Production Reactors by a Combined Modelling and Experimental Approach". See abstracts. more...

2010.05.07 Lectures on modeling of the Cz Si, DS Si, and flux GaN crystal growth in Japan

Prof. Koichi Kakimoto (Kyushu University, Japan) and Dr. Vladimir Kalaev (STR Group, Russia) will give lectures on state of the art computer modeling of the Cz Si, DS Si, and flux GaN crystal growth techniques during a seminar in SimSciD Corp. (Yokohama, Japan) on May 14th, 2010. There will be also presentations on CGSim and VR software by SimSciD. To participate in the seminar or to get printed materials free of charge, please, contact Mr. Yoshiki Tsukada (www.simscid.co.jp). more...

2010.04.21 STR will present its device modeling software at seminars in China

Dr. Karpov and Dr. Ramm will talk about STR engineering tools for device modeling SimuLAD and SimuLAMP at seminars in China. Seminars will take place in Beijing and Shenzhen on May 20th and 21st 2010. Additional information is available on Pitotech web-site: www.pitotech.com/party.php more...

2010.02.05 AIXTRON on advantages of modeling and STR models

AIXTRON published a paper discussing how multiphysics modeling, employing models developed in collaboration with STR, allows one to reduce production costs and enhance process performance, see the article in EuroAsia semiconductor. more...

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