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Modeling of Crystal Growth and Devices

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PRODUCTS
CGSim (melt)
SimuLED (LED&LD)
CVDSim (epi)
PolySim (Siemens)
Virtual Reactor (PVT)
SiLENSe (LED&LD)
SpeCLED (LED)
RATRO (LED)
BESST (III-N SLs)
FETIS (HEMTs)
SELES
CONSULTING
PVT Growth
CVD of Si-based
CVD of III-Vs
Growth from Melt
Device Modeling

2010.02.05   AIXTRON on advantages of modeling and STR models
AIXTRON published a paper discussing how multiphysics modeling, employing models developed in collaboration with STR, allows one to reduce production costs and enhance process performance, see the article in EuroAsia semiconductor. more...
2010.01.12   SiLENSe 4.2 Laser Edition has been released
SiLENSe 4.2 Laser Edition has been released. New version includes material properties of AlGaInP alloys and detailed information on contribution of different transitions to the emission spectrum. more...
2009.12.15   New 3D unsteady modeling options for Kyropoulos Sapphire
CGSim package used by leading makers of sapphire Ky and Cz crystals is now extended to perform 3D unsteady modeling of crystal seeding and body growth. New 3D options allows one to optimize wafer quality and crystal growth stability with the comprehensive analysis of unsteady melt flow features and crystallization dynamics, see Kyropoulos Sapphire page for details. more...
2009.10.16   Bridgelux selects STR software for LED modeling
Bridgelux -- manufacturer of LED chips based in California -- is now a user of STR software for modeling of light emitting diodes. more...

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