STR Group

Modeling of Crystal Growth and Devices

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PRODUCTS
SimuLED (LED&LD)
CGSim (melt)
CVDSim (epi)
PolySim (Siemens)
Virtual Reactor
SiLENSe (LED&LD)
SpeCLED (LED)
RATRO (LED)
BESST (III-N SLs)
FETIS (HEMTs)
PVcell
SELES
CONSULTING
PVT Growth
CVD of Si-based
CVD of III-Vs
Growth from Melt
Device Modeling

2014.09.29   STR Group announces a new release CGSim 15.1
CGSim 15.1 provides users a unique opportunity to calculate unsteady crystal growth processes, from furnace heating up to cooling down, within a single computation. Such computations can be performed for multiple processes and materials. These computations are supported by new functions, which include specification of time dependent gas flow rate, pressure, material properties, and possibility to change heater control algorithm (direct to inverse and back) within a single computation. more...
2013.09.17   CGSim 14.1 has been released
CGSim 14.1 has been released. New version contains a number of updates and added capabilities, including continuous modeling of stress relaxation and dislocation evolution during both crystallization and cooling stages. more...
2013.01.30   SiLENSe 5.4 has been released
SiLENSe Version 5.4 & Version 5.4 Laser Edition have been released. Redesigned interface for working with material properties enables specification of the flexible user-defined functional or tabulated dependencies on the temperature, alloy composition, and wavelength. Another new option is simulation of PL experiment with resonant excitation. more...
2012.07.05   CGSim 12.1 has been released
STR Group has launched a new release of crystal growth simulation software: CGSim 12.1. Designed for crystal growth optimization, CGSim software has extended its modeling capabilities for more accurate and fast optimization of crystal growth processes. The major improvements have been implemented in modeling of electromagnetic effects, species transport coupled with time and temperature dependent species deposition, thermal stresses and dislocations. more...

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